| 摘要 |
PURPOSE:To improve the electromigration resistance characteristic and the stressmigration resistance characteristic of wiring without decreasing the bondability of an electrode pad, by compounding the lower layer of the wiring from a first Al alloy composed of Al-Pd-Si and the upper layer from a second Al alloy composed of Al-Si. CONSTITUTION:A passivation film 8 composed of PSG or Si3N4 is adhered on the top layer of a substrate 1 and a wire 10 of Al, Au, Cu, or other materials is bonded in an electrode pad 9 formed by making a hole in a part of said film 8. The lower layer of double-layered wiring 7 consisting of an Al alloy is composed of an Al-Pd-Si alloy layer 11 made by adding about 1% of Si and about 1-3% of Pd into Al and the upper layer is composed of an Al-Si alloy layer 12 made by adding about 1% of Si into Al. Compounding a part of the wiring 7 from the Al-Pd-Si alloy layer 11 improves the electromigration resistance characteristic and the stressmigration resistance characteristic of the wiring 7. |
