| 摘要 |
PURPOSE:To improve a device in a current injection efficiency by a method wherein the device is formed of such a laminated structure that a II-VI compound semiconductor layer and a III-V compound semiconductor layer are alternately laminated and an N-type or a P-type impurity is doped to only the III-V semiconductor layer. CONSTITUTION:A P-type semiconductor layer (A) is formed of a laminated body that undoped ZnSe layers 11 and Zn doped p.GaAs layers 12 are alternately laminated, an N-type semiconductor layer (B) is formed of a laminated body that the undoped ZnSe layers 11 and Se doped n.GaAs layers 13 are alternately laminated, and a III-VI compound conductor layer (C) is formed of an undoped ZnSe layer. Therefore, electrons are injected into the middle II-VI compound semiconductor layer (C) of the undoped ZnSe layer from the N-type semiconductor layer (B), and both the N-type semiconductor layer (B) and the P-type semiconductor layer (A) are grown high in concentration when holes are injected from a hole mini band of the P-type semiconductor layer (A). By these processes, carriers can be efficiently injected. |
