发明名称 PROCESS FOR MAKING METALLIZED HOLES IN A DIELECTRIC SUBSTRATE BY VACUUM DEPOSITION OF METALS AND THE PRODUCT OBTAINED THEREBY
摘要 A process is described for making metallized holes in a dielectric substrate (1) which, after galvanic growth of the conductive paths (6, 7) delimited by photoresist (5) on the substrate (1), calls for a drilling phase of the substrate (1) and electrogalvanic creation of rivets (11) protruding beyond the edges of the holes (9) on the front of the substrate (1). Then follow the phases of completion of the conductive and resistive paths (13, 14; 15, 16) on the front, deposition of metals (17) on the back, reinforcement of the rivets (11) and galvanic growth of the back and of the metals (17) deposited inside the holes (9).
申请公布号 ZA8901890(B) 申请公布日期 1989.11.29
申请号 ZA19890001890 申请日期 1989.03.13
申请人 SIEMENS TELECOMMUNICAZIONI S.P.A. 发明人 GIAMPIERO FERRARIS;TARCISIO CAGNIN
分类号 H05K1/16;H05K3/06;H05K3/10;H05K3/38;H05K3/40;H05K3/42 主分类号 H05K1/16
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