发明名称 |
A SUPERLATTICE TYPE SEMICONDUCTOR STRUCTURE HAVING A HIGH CARRIER DENSITY |
摘要 |
<p>The superlattice type semiconductor material has a multilayered structure of first layers of semiconductor containing impurities and having a thickness thinner than electron or hole wavelength and second layers of semiconductor free from impurities or insulator having such a thickness that electrons or holes may penetrate by tunneling effect, the first and second layers being alternately piled. Electrons or holes distribute uniformly over the entire of the multilayered structure to show a property of uniform semiconductor material.</p> |
申请公布号 |
EP0133342(B1) |
申请公布日期 |
1989.11.29 |
申请号 |
EP19840304300 |
申请日期 |
1984.06.25 |
申请人 |
NEC CORPORATION |
发明人 |
BABA, TOSHIO C/O NEC CORPORATION;OGAWA, MASAKI C/O NEC CORPORATION;MIZUTANI, TAKASHI C/O NEC CORPORATION |
分类号 |
H01L21/314;H01L29/08;H01L29/15;H01L29/737;H01L29/778;H01L31/0352;H01L33/06;H01S5/32;H01S5/34;H01S5/343;H01S5/347 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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