发明名称 |
METHOD OF MANUFACTURING CONTACTS ON A SEMICONDUCTOR DEVICE |
摘要 |
<p>For providing semiconductor zones (16, 18, 26) and contact metallization (19, 27) within an opening (9) in a self-registered manner, which opening is provided along its edge with polycrystalline connection parts (10) separated by an insulating material (15) from the metallization (19, 27), a protective layer (11) is formed which is maintained within the opening (9)until within this opening (9) the connection parts (10) are formed by anisotropic etching from a uniform layer of polycrystalline semiconductor material (10). The method is suitable for the manufacture of both bipolar transistors and field effect transistors.</p> |
申请公布号 |
EP0180256(B1) |
申请公布日期 |
1989.11.29 |
申请号 |
EP19850201450 |
申请日期 |
1985.09.12 |
申请人 |
N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
APPELS, JOHANNES ARNOLDUS;MAAS, HENRICUS GODEFRIDUS RAFAEL |
分类号 |
H01L29/78;H01L21/033;H01L21/225;H01L21/331;H01L21/336;H01L23/532;H01L29/73;H01L29/732 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|