| 摘要 |
A Bloch line memory device comprises stripe magnetic domains in a magnetic film for holding magnetic bubble domains. A pair of Bloch lines is stored as an information carrier in a magnetic wall constructing the stripe magnetic domain. A longitudinal direction of the stripe magnetic domain is made parallel to either the crystalographic directions [11 &upbar& 2] and [ &upbar& 12], [1 &upbar& 21] and [ &upbar& 12 &upbar& 1], or [ &upbar& 211] and [2 &upbar& 1] of the magnetic film so that the pair of Bloch lines can be smoothly moved in the magnetic wall of the stripe magnetic domain.
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