发明名称 |
Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication |
摘要 |
A molecular beam epitaxy (MBE) process in which some portions of the substrate are shadowed by a shadow mask from receiving at least one of the molecular beams used in the MBE process. This process is capable of producing NIPI superlattices that have selective contacts that are far superior to those which can be produced at present. This technique can also produce a wide variety of NIPI devices as well as other types of IC structures.
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申请公布号 |
US4883770(A) |
申请公布日期 |
1989.11.28 |
申请号 |
US19890298794 |
申请日期 |
1989.01.17 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
DOHLER, GOTTFRIED H.;HASNAIN, GHULAM;MILLER, JEFFREY N. |
分类号 |
H01L21/203;H01L21/28;H01L29/15;H01L31/0352 |
主分类号 |
H01L21/203 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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