| 摘要 |
PURPOSE:To increase the strength against an external stress by a method wherein, before a wafer is cut into pieces, a groove covered with a passivating film is filled with a thick insulator in order to reinforce the passivating film. CONSTITUTION:An anode electrode 4 and a cathode electrode 3 are formed on a main face of a wafer 15; after that, a ring-shaped groove 7 is formed; an anode region 22 and a cathode region 23 are separated electrically. Then, this groove 7 is filled with an insulator 24 composed of an insulating resin such as a polyimide resin or the like and is blocked; a passivating film 12 is reinforced and a flat part of the passivating film 12 is covered. Then, a GaAs layer 16 out of a substrate 18 is polished and removed; the wafer is cut into pieces lengthwise and crosswise; a chip 26 is manufactured. After that, the rear of the chip 26 is ground to be a dome shape; a dome-shaped light- emitting diode element 13 is manufactured. |
