Electric device and manufacturing method of the same.

摘要

An improved electric device and manufacturing method for the same are described. The device is for example an IC chip encapsulated in an organic material. Prior to the moulding process, the IC chip is coated with silicon nitride in order to protect the IC chip from moisture entering through cracks or gaps. The coating of silicon nitride is carried out by plasma CVD. In particular, an AC voltage is applied to the IC chip during deposition for the purpose of obtaining an excellent of the silicon nitride coating.