| 摘要 |
PURPOSE:To facilitate the manufacture of an exposure mask by a method wherein specified soft X-rays are led in pressure-reduced He atmosphere through the intermediary of a diamond carbon type film to transfer a pattern of an X-ray exposure mask using the carbon film as a substrate. CONSTITUTION:A beam line 12 is connected in the tangential line direction of an electron track of an electron storage ring 11 in wave length exceeding 44Angstrom to pressure-reduce the inside of the beam line 12. The soft X-rays 13 radiated from the storage ring 11 are taken in the beam line 12 to be totally reflected by a mirror 14. The intermediate part of the beam line 12 is sealed with a diamond type carbon film 15 to lead the gas into a specimen chamber 16 between the carbon film 15 and the terminal of the beam line 12. A wafer 18 coated with an X-ray resist is overlapped with the diamond type carbon film 15 using X-ray exposure mask 17 formed of a pattern and then an exposure shutter 19 is opened to irradiate the wafer 18 with the totally reflected soft X-rays by the mirror 14 for the transfer of said pattern. Through these procedures, the X-ray exposure mask can be manufactured easily. |
