| 摘要 |
<p>PURPOSE:To obtain an X-ray mask having an absorber pattern which contains vertical side walls and whose space ratio is large by making use of a photodoping phenomenon as a method to form a stencil. CONSTITUTION:A base layer 3 composed of a conductor and a chalcogenide glass layer 4 are applied one after another to a mask support 1, a thin layer of Ag or the like as a doping agent layer 5 is formed on the chalcogenide glass layer 4 of SeGe or the like, and a pattern of light is irradiated. In a part exposed to the light, Ag is doped vertically and very sharply into SeGe and becomes insoluble in an alkali, a part not exposed to the light is dissolved in the alkali and, the remaining doping agent layer 5 is removed. After that, the undoped SeGe layer 4 is etched and removed by using an alkaline solution, a stencil 6 is formed, an X-ray absorber 7 is filled into a removed region and the remaining chalcogenide glass layer 4 and the base layer 3 at its lower side are removed. By this setup, it is possible to obtain an X-ray mask having an absorber pattern 8 which contains vertical side walls and whose space ratio is large.</p> |
