| 摘要 |
PURPOSE:To remove a noise of a low voltage and the like by a method wherein Sr is contained excessively so as to set a ratio of Sr to Ti at 1.001-1.05 and one or more of CeO2, Y2O3 and La2O3 and one or more of SiO2, CuO, Co2O3 and MnCO3 are respectively added to SrTiO3 containing Li and F. CONSTITUTION:An SrTiO3 powder is used as a raw material; Sr is added excessively so as to make 1.001<=Sr/Ti<=1.05; then, a lattice defect is increased; a semiconductor property is promoted; in addition, when another element, e.g., Ce, Y or La, is substituted for Sr, an atomic property is controlled and the semiconductor property is promoted. Then, when SiO2, CuO, Co2O3 and MnCO3 are added, these are segregated at a grain boundary, the grain boundary is made a high resistance and a varistor characteristic is revealed. In addition, when LiF is added and this assembly is fired in a reducing atmosphere or in an atmosphere of nitrogen, a sintering operation is promoted by a liquid sintering operation. By this setup, it is possible to obtain an element which can protect a semiconductor and a circuit from a noise and static electricity. |
