| 摘要 |
PURPOSE:To prevent a flare from generating even when a strong light enters an element by disposing a light absorption layer independent from a light absorption layer used also as a shielding layer or a shielding layer on the shielding layer. CONSTITUTION:An n<+> type impurity-implanted photodiode 11 and an n<+> type impurity-implanted vertical charge transfer path 12 are formed on a P-type semiconductor substrate 10, a transfer electrode and an aluminium shielding film 14 are disposed on the substrate except the photodiode 11 through an insulating layer 13 made of SiO2, and a cover glass 17 is disposed on the film 14 through an air layer 16. A light absorption layer is used also as the film 14, or a light absorption layer 15 made of black organic material for preventing the light from reflecting is provided on the film 14. Thus, it can preferably prevent a flare from generating without reflection and multiple reflections on the surface of the shielding layer upon receiving an incident strong light.
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