| 摘要 |
PURPOSE:To facilitate the opening of a fine aperture, reduce the aspect ratio of the fine aperture, and improve the covering of an upper wiring layer by forming an interlayer insulating film in the manner in which the film thickness of a part, where the fine aperture is formed, is made thinner than the other part. CONSTITUTION:In an active region defined by an field oxide film 2 arranged on a semiconductor substrate 1, the following are formed to constitute an MOS type field effect transistor; a gate oxide film 3, a gate electrode 4, and a diffusion region 5 for source.drain region. An interlayer insulating film 6 is stuck on the whole surface. In a region corresponding with the gate electrode 4 and the diffusion region 5, i.e., in the active region, the interlayer insulating film 6 is made thinner than the other part. In the thin interlayer insulating film 6 on the diffusion region 6, a contact hole 7 is bored; a wiring layer 8 as an upper conducting layer is formed, on the region including the contact hole 7; electric connection with the diffusion region 5 is completed through the contact hole 7. |
