| 摘要 |
PURPOSE:To achieve impurity doping in self-aligning manner without producing an over diffused are in a semiconductor substrate, by forming a protective film selectively on a conductive layer made of a polycrystalline semiconductor film and metal or silicide compound, and implanting impurity ions to areas without the protective film, and activating the conductive layer with heat treatment of a substrate, and removing the conductive layer selectively. CONSTITUTION:An active part forming area a and a non-active part forming area B of a semiconductor element are demarcated on a substrate 11 and a double layer structure conductive layer 14 consisting of a polycrystalline semiconductor film 12 and metal or silicide compound 13, is produced thereon. Then, form a protective film 15 selectively on the conductive layer 14, and implant impurity ions to areas without the protective film 15. Then, apply heat treatment on the substrate 11 and activate the conductive layer 14, and selectively remove the conductive layer 14. Thus, the polycrystalline semiconductor film 12 in the active part forming area A where the protective film is formed, can be activated in self-aligning manner, and production of an area with excessively diffused impurity in the substrate can be avoided. |
