发明名称 MANUFACTURE OF PATTERN
摘要 PURPOSE:To obtain a resist pattern having no skirt at all after its development by covering a board having metal at its uppermost layer with specific photosensitive resin composition, further covering the covering layer with specific photosensitive resin composition, exposing and developing it. CONSTITUTION:A board having metal at its uppermost layer is covered with photosensitive resin composition I capable of forming an image with 300-900mJ/cm<2> of radiation energy of an ultraviolet ray, the covering layer is covered with photosensitive resin composition II capable of forming an image with 10-290mJ/cm<2> of radiation energy of the ultraviolet ray, exposed and developed. The compositions I, II contain as main ingredients vinyl copolymer, ethylenic unsaturated compound and optical initiator, radical polymerization occurs in a photosensitive layer by the radiation of the ultraviolet ray, and of negative type in which its resistance to a developer is increased. A skirt is not formed in the shape of a resist obtained by this.
申请公布号 JPH01283897(A) 申请公布日期 1989.11.15
申请号 JP19880112968 申请日期 1988.05.10
申请人 HITACHI CHEM CO LTD 发明人 MASAOKA KAZUTAKA;WADA MIEKO;TSUCHIYA KATSUNORI;KAKUMARU HAJIME
分类号 C25D5/02;C23C30/00;C23F1/00;H05K3/00;H05K3/06 主分类号 C25D5/02
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