| 摘要 |
PURPOSE:To absorb light passing through a resist pattern at the time of exposure at the after-process by a surface of a dielectric film, and to prevent high resistivity and disconnection of wiring, by a method wherein a metallic film is formed on a semiconductor substrate, a dielectric film is formed thereon, and inert ions are implanted to the dielectric film to blacken the surface. CONSTITUTION:A P type Si substrate 11 is applied with a polycrystalline Si layer 12 of the predetermined pattern, and covered with SiO2 film 13 thereover. Then, laminal Al-Si film 14 and Si3N4 film 15 are cladded thereon. The film 15 is implanted with As ions to blacken the surface thereof, and then is applied with a positive resist film 16 thereover. After that, a glass mask 17 having mask patterns correspondingly to the positions prearranged for wiring is applied onto the film 16. The resultant multilayers are exposed to light. As light passes through the film 16 and is absorbed by the surface of the film 15, there is no reflection of light from the film 14. After that, the mask 17 is removed, the development is performed, and the laminal patterns 19 and 18 comprising the films 16 and 15 are formed. Finally, the film 14 is etched to form the wiring 20 comprising the film 14, utilizing the patterns 19 and 18 as masks. |
