| 摘要 |
PURPOSE:To form an element without wasting any space on the region to form the element for preventing the space in element region from decreasing thereby augmenting the degree of integration by a method wherein identification patterns are formed in the region of gate electrode where no element is formed. CONSTITUTION:A MOSFET element is formed underneath the region of a source electrode 11 through the intermediary of an interlayer insulating film but not formed in the region of a gate electrode 12. A pair of identification patterns 13 are formed on adequate positions in the region of the gate electrode 12. Furthermore, the identification patterns 13 are positioned not to disturb the wire bonding process. Through these procedures, any wasteful space in the region to form the MOSFET element can be avoided to prevent the space for element region from decreasing. |
