| 摘要 |
PURPOSE:To remove the sag of a resist pattern and to improve and stabilize dimensional accuracy by resting the resist pattern after development in a vacuum and removing the solvent remaining in the resist, then executing post stages such as post baking treatment and descum treatment. CONSTITUTION:The substrate having the resist pattern after the development is rested in the vacuum and after the solvent remaining in the resist is removed, the post stages such a post baking treatment and descum treatment are executed. The resist material to be used is exemplified by, for example, polymers, etc., having glycidyl groups such as polyglycidyl methacrylate and glycidyl methacrylate/acrylic acid copolymer. The generation of the sag of the resist pattern at a low temp. is thereby completely obviated and the resist pattern formed after the development is stabilized in both the size and shape. |
