Method for reduction of filaments between electrodes
摘要
The disclosure relates to a method for reducing filament formation over the BN+ oxide in semiconductor devices wherein a sidewall oxide is formed on the side walls of the first polysilicon layer prior to subsequent formation of the intermediate insulating layer, formation of a second polysilicon layer and subsequent anisotropic etch to provide for removal of all polysilicon over the field oxide.
申请公布号
US4878996(A)
申请公布日期
1989.11.07
申请号
US19890300468
申请日期
1989.01.23
申请人
TEXAS INSTRUMENTS INCORPORATED
发明人
MITCHELL, ALLAN T.;TIGELAAR, HOWARD L.;GARG, SHAYM G.;RAO, KALIPATNAM V.