| 发明名称 |
Method of etching thin indium tin oxide films |
| 摘要 |
A thin layer of indium tin oxide is deposited on a substrate and etched by ion reactive etching with a plasma consisting of disassociated argon.
|
| 申请公布号 |
US4878993(A) |
申请公布日期 |
1989.11.07 |
| 申请号 |
US19880289654 |
申请日期 |
1988.12.22 |
| 申请人 |
NORTH AMERICAN PHILIPS CORPORATION |
发明人 |
ROSSI, BARBARA A.;MITRA, UDAYANATH |
| 分类号 |
C23F4/00;C04B41/50;C04B41/53;C04B41/87;C04B41/91;H01B5/14;H01B13/00;H01L21/302;H01L21/3065;H01L31/04;H01L31/18;H05K3/02 |
主分类号 |
C23F4/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
