| 摘要 |
The method for manufacturing a semiconductor device with submicron pattern and minimum noise includes steps of: (a) lithographing of deposited oxide film (17) of the first collector and the second intrinsic base (19) by photolithognaphic technology after growing the thermal oxide film (15), nitride film (16) , and deposited oxide film (17) on N-type epitaxy layer; (b) forming an intrinsic base region (19) and an extrinsic base region (20) by thermal diffusion after implantation of P-type impurity through the thermal oxide film (15) and nitride film (16); (c) forming an emitter (24) and a high-doped collector (25) with high-doped Ntype poly-Si thin film (23).
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