| 摘要 |
PURPOSE: To provide a thristor exhibiting high positive and negative block function through a simple structure by a structure in which both pn junctions are provided on the upper surface of the semiconductor substrate of the thyristor and the edge regions of pn junction of the opposite blocking performances are arranged on the same side of the thyristor. CONSTITUTION: A p conductivity type base region 2 is isolated by a planar first pn junction 3 extending in parallel with the upper surface 1a of a semiconductor substrate 1 while approaching gradually thereto at the fringe region thereof from the semiconductor substrate 14 part constituting an n-type base beneath the planar first pn junction 3. A p conductivity type semiconductor layer 11 spreads from the lower surface to the upper surface to limit lateral spread of the semiconductor substrate in a p conductivity type side region 15 from which a p conductivity type semiconductor region 17 continues. The region 17 is isolated by a planar second pn junction 18 starting from the p conductivity type side region 15 and extending along the upper surface 1a of the semiconductor substrate toward the end fringe 4 of the p-type base region 2 while approaching gradually to the upper surface 1a from the the semiconductor substrate 14 located beneath the planar second pn junction 18.
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