发明名称 SOLID-STATE IMAGE SENSING DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To contrive the improvement of the sensitivity of an element and to make it possible to manufacture a microlens of a desired configuration at low cost without increasing the number of processes by a method wherein the microlens is formed into a transparent resist consisting of silicon, polystyrene and so on by dry etching. CONSTITUTION:Photodiodes 2 and a bonding pad part 3 are formed on a semiconductor substrate 1, the part 3 is exposed on the upper surface of this substrate to laminate in order a passivation film 4 and a filter layer 5, the surface 5a of the layer 5 is roughened conforming to the configuration of a microlens 6, which is formed on the surface 5a, a transparent resist 6a consisting of polystyrene, for example, is applied on the upper surface of the layer 5 and the film 4, the layer 4 and the resist 6a, which are located on the part 3, are removed by developing. Moreover, a positive resist 7 is coated, a dry etching is performed to form the convex lens-shaped microlens 6 with this resist 6a and the resist which is located on the layer 5 and is located over the part 3 is removed using the resist 6a as a mask to manufacture a solid-state image sensing device.
申请公布号 JPH01270362(A) 申请公布日期 1989.10.27
申请号 JP19880099876 申请日期 1988.04.22
申请人 TOSHIBA CORP 发明人 ENOMOTO TADASHI
分类号 G02B3/00;H01L27/14;H01L27/146;H01L31/02;H01L31/0232;H01L31/0248;H04N5/335;H04N5/359;H04N5/369 主分类号 G02B3/00
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