| 摘要 |
PURPOSE:To implement a JOFET wherein a superconducting critical current Ic is large, i.e., an ON/OFF ratio is large, and the characteristics are uniform over a substantial area, by a structure wherein a semiconductor thin film is held between the upper and lower superconductor electrodes on an arbitrary substrate. CONSTITUTION:On an arbitrary substrate 101, a semiconductor thin film 103 is held between upper and lower superconductive electrodes 102 in this structure. For example, Nb is used for the superconductive electrodes 102. Si having the film thickness of about 0.1mum which is grown as a crystal by a solid-phase growing method and the like is used for the semiconductor thin film. As shown in the Figure, the superconductive electrodes 102, the semiconductor thin film 103, a gate insulating film 104 and a gate electrode 105 are provided on the arbitrary substrate 102. In this way, a channel length L of a JOFET can be controlled with the thickness of the semiconductor thin film 103. The length L can be shortened with far more excellent controllability with the thickness of the semiconductor thin film in comparison with a conventional photolithography method. Therefore, the JOFET having the sufficiently large Ic and the large area can be obtained. |
