发明名称 PLANAR TYPE THYRISTOR
摘要 PURPOSE:To increase the value of a current flowing between an anode and a cathode and to obtain a planar type thyristor to be miniaturized by enhancing the p-type impurity concentration of an anode side p-type region larger than that of a p-type region for forming a bipolar transistor. CONSTITUTION:A p<+> type diffused layer 14A is initially formed also in a region 14A in a step of forming a p-type diffused layer 16 of a bipolar transistor, high concentration p-type impurity is again diffused only in the part of the region 14A in a next step, and a final p<+> type diffused layer 14A is formed. In operation, when a forward voltage is applied between an anode 20 and a cathode 24 and a predetermined positive voltage to the cathode 24 is applied to a gate 22, a planar thyristor is turned ON, and a current flows sequentially from the anode 20 through the layer 14A, an n<-> type epitaxial layer 12, the p-type diffused layer 16, and an n<+> type diffused layer 18 to the cathode 24. The opposing area of the layer 14A is narrower than that of the layer 14, but since it has smaller resistance value than that of the layer 14, the equivalent resistance 28A of the layer 14 is relatively small.
申请公布号 JPH01268170(A) 申请公布日期 1989.10.25
申请号 JP19880097768 申请日期 1988.04.20
申请人 FUJITSU LTD 发明人 TANAKA HIROKAZU;NAKAMURA KENICHI
分类号 H01L29/74 主分类号 H01L29/74
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