| 摘要 |
PURPOSE:To enable high withstand voltage to be achieved by adjacently surrounding an electrode layer and forming a thin layer consisting of a substance forming a Schottky barrier between itself and a semiconductor, by implanting ion through the thin layer with a coating formed on the electrode layer as a mask, and by forming a semi-insulation semiconductor area. CONSTITUTION:An electrode layer 15a consisting of a substance forming a Schottky barrier between itself and a semiconductor area 13a and a thin layer 14 adjacently surrounding the electrode layer 15a and consisting of a substance forming a Schottky barrier between itself and the semiconductor area 13a are formed on one main surface of the semiconductor area 13a. Then, an ion 19 is implanted into a semiconductor area 13 through a thin layer 14b with a coating 17a formed on the electrode layer 15a as a mask and a semi-insulation semiconductor area 20 is formed surrounding the semiconductor area 13a. Thus, it is regarded that the electrode layer 15a forms a main part of a barrier electrode 18, while thin layers 14a and 14b are auxiliary barrier electrodes. Thus, since the barrier electrode 18 and the semi-insulation semiconductor area 20 are formed with a sufficient width of overlapped area, reduction in withstand voltage characteristics can be prevented. |
