| 摘要 |
PURPOSE:To prevent an impurity from being mixed and to realize the high performance and high density by a method wherein a source electrode or a drain electrode for a switching transistor is connected to an electrode, composed of polycrystalline or a silicide, filled into a substrate, the other electrode is connected to a bit line and a gate electrode for the switching transistor is connected to a word line. CONSTITUTION:A buried layer 3 composed of polycrystalline Si or a metal silicide is formed in a groove formed in an Si substrate 1 via insulating films 2, 2A of such as Si or the like. A polycrystalline Si or silicide layer 11 is connected to the substrate 1, separated via the electrode 3 and the insulating film 2 and insulated by an insulating film 4; an SOI Si island 5 is formed. One region from a source or a drain for a switching transistor is coupled to the buried electrode 3 via a through hole wiring part 12; an accumulation capacitor where the buried electrode 3 acts as one electrode and the Si substrate 1 acts as the other electrode is constituted; a dynamic memory cell having a word line 8 and a bit line 9 is formed. |
