| 摘要 |
PURPOSE:To obtain a high-integration and high S/N memory by a method wherein a channel part of a switching MOST inside a cell is formed on a side wall of a groove formed in a silicon substrate and this groove is formed to be a continuous belt shape. CONSTITUTION:A thin insulating layer of silicon oxide or the like is formed on the surface of a substrate; a word line W of a low-resistance material such as polycrystalline silicon or the like is formed on a side face of a groove; this line is oxidized; an insulating layer is formed. Then, the insulating layer at a bottom part of the groove is removed; after that, a low-resistance material such as n-type polycrystalline silicon or the like is filled into the groove; an accumulation capacitance ST is formed; by means of a heat treatment process, an n-type diffusion layer region N1 is formed in the bottom part of the groove by diffusion from the ST. Then, the ST is covered with a thin insulating layer; after that, a plate PL is formed on it by using, e.g., polycrystalline silicon. Lastly, the PL is covered with an insulating layer; after that, an n-type diffusion region N2 is formed on the surface of the silicon substrate by ion implantation or the like; in addition, the surface of the silicon substrate is exposed; a data line D is formed by using a low-resistance material such as Al or the like. |
