| 摘要 |
PURPOSE:To enable the manufacturing of a semiconductor device without using solder material chip, and improve workability, by forming an electrode layer composed of solder material, on the rear of a semiconductor element, and mounting it on a necessary part of a substrate by fusion bonding of the electrode layer. CONSTITUTION:A thin film 5 of eutectic solder material is formed on the whole rear of a semiconductor wafer 1, on one surface of which semiconductor elements 2,... are formed. The wafer are broken along scribe trenches, and each semiconductor element 2 is separated. The whole rear of the separated semiconductor element 2 is covered with a thin film of eutectic solder material, and this thin film turns to an electrode layer 3 of each semiconductor element 2. This semiconductor element 2 is so mounted at a specified position of the substrate 4 that the electrode layer 3 faces downward. By fusion bonding treatment like thermal compression bonding, the electrode layer 3 is melted, and the semiconductor element 2 and the substrate 4 are electrically connected. Thereby, a process to interpose a solder chip between the semiconductor element 2 and the substrate 4 is saved, so that the mounting process of semiconductor elements is simplified, and workability is improved. |
