| 摘要 |
<p>PURPOSE:To enable the use of low-resistance aluminum wirings for the thin-film transistor driving liquid crystal display device by forming display electrodes consisting of thin indium tin oxide (ITO) films, then forming the electrode wires of two layers of metals consisting of a thin metallic film which can be molded by a fluoride and the thin aluminum film. CONSTITUTION:After the display electrode 101 consisting of the thin ITO film is formed, the thin metallic film 102 which can be molded by the fluoride is formed, then the thin aluminum film 103 is formed. The electrode wirings are formed of two layers of the metals 102, 103. The thin ITO film 101 which is the display electrode is not exposed to an etching atmosphere in an etching stage of the aluminum 103 using a photoresist 104. The thin ITO film 101 is not attacked by the fluoride at the time of etching of the metal 102 by the fluoride. The thin ITO film 101 and the thin aluminum film 103 to be etched by the same etching atmosphere are thus etched respectively by the separate photolithography states. The use of the low-resistance aluminum wirings to the thin-film transistor driving liquid crystal display device is thereby enabled.</p> |
