发明名称 METHOD FOR VACUUM DEPOSITING CHROMIUM
摘要 PURPOSE:To prevent deterioration in the quality of a film due to the penetration of residual gas into the film, by evaporating CrO2Cl2 in vacuum, blowing gaseous H2 to reduce the vapor to Cr, and by depositing the Cr on a substrate. CONSTITUTION:A crucible 1 holding CrO2Cl2 2 in a vacuum vessel 8 is kept at about 300 deg.K with a heating and cooling mechanism 3 while evacuating the vessel 8. The CrO2Cl2 2 is converted into vapor by evaporation up to about 1 Torr. By blowing gaseous H2 through a nozzle 5 in the state, the vapor of the CrO2Cl2 2 is reduced to Cr, and a deposited Cr film 7 is formed on a substrate 6. It is effective that the blown gaseous H2 is electrically excited to generate discharge plasma for accelerating the reduction of the CrO2Cl2.
申请公布号 JPS58161769(A) 申请公布日期 1983.09.26
申请号 JP19820042431 申请日期 1982.03.17
申请人 NIPPON DENSHIN DENWA KOSHA 发明人 NAGAI KAZUTOSHI;KUWANO HIROKI
分类号 C23C16/50;C23C16/10 主分类号 C23C16/50
代理机构 代理人
主权项
地址