| 摘要 |
PURPOSE:To carry out vacuum deposition at a low temp. and to save electric power for heating by evaporating SnS2 by heating in vacuum, introducing gaseous hydrogen to reduce the vapor, and depositing Sn on a substrate. CONSTITUTION:SnS2 2 put in a crucible 1 in a vacuum vessel 8 is heated to about 800 deg.K with a heater 3. The SnS2 2 is converted into vapor 4 by evaporation up to about 1X10<-3>Torr. By blowing gaseous hydrogen through a nozzle 5 in the state, a reaction is caused between the vapor 4 of the SnS2 2 and the gaseous hydrogen to produce Sn, and the Sn is deposited on the surface of a substrate 6 to form a deposited Sn film 7. Thus, the unfavorable influence of radiant heat on the substrate 6 and the apparatus is eliminated. |
