Epitaxial deposition of thin films.

摘要

Changes in the in situ geometrical and stoichiometric properties of deposited films are brought about by employing a radiation beam directed to a spot which is scanned across the growth surface in a chemical vapor deposition reactor system, e.g., MOCVD system. Gaussian profile spot intensity variations at selected regions at the growth surface will selectively enhance the deposition growth rate and/or in situ stoichiometric content of the deposited film. Selective monotonic increasing and decreasing changes in film thickness and stoichiometric content can be accomplished while the spot is scanned across the growth surface. Such changes or variations in film thickness and stoichiometric content are useful in fabricating semiconductor devices having regions of different bandgap and refractive index properties in one or more semiconductor layers of such devices. These property variations may be utilized to produce buried index waveguiding features in such devices and produce multiple emitters each having a different wavelength emission useful in printer and optical communication applications.