| 摘要 |
Disclosed are a charge-coupled device with lowering of output potential as well as a method for the fabrication of this device. In a known way, the device comprises, upstream on a semiconducting substrate with a first type of doping (P), a semiconducting layer with a second type of doping (N) and an insulating layer covering the former layer. Pairs of electrodes are formed on the insulating layer. Each pair has a transfer electrode and a storage electrode. Zones with a third type of doping N+) are made in the layer of a second type (N). A layer with a third type of doping (N-) is made downstream, in the layer with a second type of doping, and, downstream, there is formed at least one other pair of additional transfer and storage electrodes. A zone with a fourth type of doping (N--) is made beneath the additional transfer electrode in the layer with a third type of doping (N-). This pair of additional electrodes and the zone with a fourth type of doping make it possible to obtain the lowering of transfer potential at output.
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