发明名称 |
PROCESS ADAPTED TO THE MANUFACTURE OF BICMOS |
摘要 |
The BiCMOS means a combined semiconductor with high speed Bipolar and large scale CMOS. The manufacturing process of BiCMOS involves: (a) forming p-well after the growth of epitaxy layer on n+ region formed on p-type substrate; (b) depositing the nitride film on the oxide film, and isolating the p+ junction; (c) forming base and collector of bipolar transistor by implanting impurities after growth of CMOS gate oxide; (d) forming a gate of CMOS and emitter of bipolar transistor after depositing oxide film on the n+ layer formed by impurities; (e) forming source and drain of PMOS, NMOS; (F) thermal oxidising or soarce and drain of CMOS, and Aluminium metalization.
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申请公布号 |
KR890003827(B1) |
申请公布日期 |
1989.10.05 |
申请号 |
KR19870008119 |
申请日期 |
1987.07.25 |
申请人 |
ELECTRONIC TELECOMUNICATIONS RESEARCH INSTITUTE;KOREA TELEGRAM & TELEPHON PUBLIC CORP. |
发明人 |
KIM KWANG-SOO;CHAE SANG-HOON;KOO YONG-SO;KIM YEO-HWAN;LEE JIN-HYO |
分类号 |
H01L29/73;H01L21/331;H01L21/8249;H01L27/06;H01L29/732;(IPC1-7):H01L27/06 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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