| 摘要 |
<p>MOVPE growth and photoetching are integrated into a unified sequence which is carried out without removing a workpiece from a MOVPE reactor. Growth may be carried out before, after or before and after the etching. To prevent pattern broadening by diffusion of the active species the substrate is preferably protected by a fugitive coating which is removed by the illumination. Native oxide coatings are particularly suitable for InGaAsP substrates. These are conveniently applied by exposing the substrate to 20 % O2 + 80 % N2 for about 3 minutes at 450°C.</p> |
