| 摘要 |
PURPOSE:To enable a crystal growth layer to be flatly embedded into a groove which is in forward mesa shape by forming a groove which is in forward mesa shape where the undercut amount at the lower part of selected mask is specified times the depth of groove on a substrate where one part of selected mask is eliminated and exposed. CONSTITUTION:A selective mask of SiNX is formed on the entire surface of an InP substrate 6 by the plasma CVD. Then, a resist film 8 is formed on a selective mask 7, resist film is set to a specified pattern by the photolithography technology, and one part of the selective mask 7 is eliminated in the <0-11> directional stripe shape from the opening. Then, this substrate 6 is etched by an etchant of mixed liquid of sulphuric acid, water, and hydrogen peroxide water to form a forward mesa shape groove 8. Then, the substrate 6 at the lower part of the selective mask 7 is undercut so that the selective mask 7 protrudes by 0.3-1.5times the depth of the forward mesa shape groove 8 on the plain extension line of the substrate 6 at the upper part of the forward mesa shape groove 8. Then, a crystal growth layer 9 of GaInAs is accumulated within this forward mesa groove 8 by the organic metal vapor growth method. |
