| 摘要 |
<p>PURPOSE:To enable the easy enlargement and reduction of patterns with one sheet of a photoresist mask only by increasing and decreasing of exposing time by providing plural slits to the inner side of the outer peripheral part of the circuit pattern of the photoresist mask. CONSTITUTION:The photoresist mask formed to the shape to provide the plural slits on the inner side at the outer peripheral edge of the normal circuit patterns 2 of the photoresist mask 1 is used and the exposing time is changed in a photolithographic stage. Patterning is executed by the shorter exposing time to prohibit the resolution of a distance (a) if the large circuit patterns are desired to be formed on a wafer 3. Such long exposing time as to thin the photoresist 4 by the increased exposing time for the distance (b) and to prohibit the patterning of the distance (b) is used attain the smaller circuit patterns if the small circuit patterns are desired to be formed on the wafer 3. The enlargement and reduction of the circuit patterns are thereby easily executed with a sheet of the photoresist mask.</p> |
