| 摘要 |
PURPOSE:To improve focus margin at stepper irrespective of a stage difference structure by forming on the resist the naphtoquinone-diazedesulfonic acid-ester- coating of 2,2' methylenebis. CONSTITUTION:In a first step, a negative type resist coating with an absorbancy index of 1mum<-1> or more, is formed on a base 1. In a second step, the naphtoquinone-diazide-sulfonic acid-ester-coating 11 of the 2,2' methylenebis (4-methyl-6-t butylphenol) is formed on the negative type resist coating. The first and second steps are introduced in that order. That is, the naphtoquinone- diazide-sulfonic acid-ester-coating 11 of the 2,2' methylenebis exists on the negative type resist coating on the base 1. Thus, even in an area where a great amount of light is partially exposed owing to defocusing, removal with developer for underlayer resist or with solution, which does not dessolve the underlayer resist, is performed with or without said light; and a pattern is formed satisfactorily. |
