| 摘要 |
PURPOSE:To discover the broken position of a capacitor insulating film formed at an irregular section easily and positively by removing an electrode material through chemical etching while including a process in which a semiconductor substrate is etched slightly through the broken position of the insulating film. CONSTITUTION:A first process in which an impurity in a polysilicon gate electrode 4 is diffused into a semiconductor substrate 1 at a high temperature, a second process in which the electrode 4 and an insulating film 3 are etched chemically under an etching gas atmosphere, and a third process in which the semiconductor substrate 1 is etched chemically so that a diffusion region 6 for the impurity is exposed are provided. The third process is contained in an identifying method for a broken position. Accordingly, even when the method is applied to a shape as a capacitor having irregularities, the broken part can be identified strictly and accurately, and the method is effective to the improvement of the reliability of a capacitor insulating film and the promotion of the development of the processes. |
