发明名称 Tunnel injection type static transistor and its integrated circuit
摘要 In a static induction transistor of tunnel injection type, a tunnel injection region is formed between its source region and channel region, and its gate region is formed of a semiconductor having a forbidden band larger than that of said channel region and contacting partially or wholly with the surface of said channel region. Such a transistor is also applied to an integrated circuit.
申请公布号 US4870469(A) 申请公布日期 1989.09.26
申请号 US19880147656 申请日期 1988.01.25
申请人 RESEARCH DEVELOPMENT CORP.;NISHIZAWA, JUNICHI;MOTOYA, KAORU 发明人 NISHIZAWA, JUNICHI;MOTOYA, KAORU
分类号 H01L27/06;H01L29/08;H01L29/10;H01L29/205;H01L29/43;H01L29/772 主分类号 H01L27/06
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