发明名称 |
Tunnel injection type static transistor and its integrated circuit |
摘要 |
In a static induction transistor of tunnel injection type, a tunnel injection region is formed between its source region and channel region, and its gate region is formed of a semiconductor having a forbidden band larger than that of said channel region and contacting partially or wholly with the surface of said channel region. Such a transistor is also applied to an integrated circuit.
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申请公布号 |
US4870469(A) |
申请公布日期 |
1989.09.26 |
申请号 |
US19880147656 |
申请日期 |
1988.01.25 |
申请人 |
RESEARCH DEVELOPMENT CORP.;NISHIZAWA, JUNICHI;MOTOYA, KAORU |
发明人 |
NISHIZAWA, JUNICHI;MOTOYA, KAORU |
分类号 |
H01L27/06;H01L29/08;H01L29/10;H01L29/205;H01L29/43;H01L29/772 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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