SILICON GERMANIUM PHOTODETECTOR

摘要

SILICON GERMANIUM PHOTODETECTOR This invention embodies a photodector comprising a first cladding layer of silicon (e.g. 3) having a first conductivity type, a second cladding layer (e.g. 7) having a second conductivity type and an interleaved region (e.g. 5) positioned between the two cladding layers, the interleaved region comprising alternating layers of GexSil-x and GeySil-x wherein x is greater than 0.0 and y and less than or equal to 1.0, and y is greater than or equal to 0.0 and less than 1.0. (FIG. 1).