| 摘要 |
PURPOSE:To prevent the accurring of trouble in a post-process, and to obviate the formation of an undesired impurity layer, by forming a buried diffusion region of the solid phase using glass containing an impurity. CONSTITUTION:An antimony-glass film 12 is formed onto a silicon semiconductor substrate 11. A silicon dioxide film 13 is grown. The silicon dioxide film 13 is patterned, and windows are formed to a position where the buried diffusion region need not be formed and a position where a positioning mark is formed previously. The same windows are formed through the etching of the film 12 through the windows, and the surface of the substrate 11 is exposed. A mask film 14 consisting of a photo-resist is formed, a window is formed at the position where the positioning mark is formed previously through the patterning of the film 14, and the surface of the substrate 11 is exposed to the window again. The mask film 14 and the silicon dioxide film 13 are removed, and a cover film 15 of silicon dioxide is formed through a chemical vapor deposition method. Antimony is diffused into the substrate 11 from the antimony-glass films 12 through heat treatment, and the n<+> type buried diffusion regions 16 are formed. |
