发明名称 |
ANISOTROPIC SILICON ETCHING IN FLUORINATED PLASMA |
摘要 |
<p>FI9-83-090 ANISOTROPIC SILICON ETCHING IN FLUORINATED PLASMA A method of high rate anisotropic etching of silicon in a high pressure plasma is described. In one embodiment, the etching ambient is a mixture of either NF3 or SF6, an inert gas such as nitrogen, and a polymerizing gas such as CHF3 that creates conditions necessary for anisotropy not normally possible with nonpolymerizing fluorinated gases in a high pressure regime. The etch process is characterized by high etch rates and good uniformity utilizing photoresist or similar materials as a mask. The present process may advantageously be used to etch deep trenches in silicon using a photoresist mask.</p> |
申请公布号 |
CA1260365(A) |
申请公布日期 |
1989.09.26 |
申请号 |
CA19860505365 |
申请日期 |
1986.03.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN, LEE;MATHAD, GANGADHARA S. |
分类号 |
H01L21/302;H01L21/3065;(IPC1-7):C30B33/00;H01L21/467 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|