| 摘要 |
<p>PURPOSE:To manufacture a thin film transistor having high performance by using an inexpensive glass substrate of a resin substrate by crystallizing an amorphous silicon film by irradiating it with a pulse laser, and forming source, drain regions by impurity doping by laser radiation. CONSTITUTION:An a-Si:H film 3 is crystallized by irradiating it with a pulse laser beam 5 to form a polycrystalline Si film 6 at an ambient temperature. The film 6 is patterned to form an insular pattern, and an aluminum film 8 is formed on a film 7. The films 8, 7 are patterned, and a gate bus line 9 and a gate electrode 10 are formed. With the film 7 as a mask the film 4 is etched to expose the film 6. After a phosphorus P film 11 is, for example, formed on a whole surface, the surface is radiated with the beam 5 by a XeCl excimer laser. The P is doped in a self-aligning manner to the electrode 10 in the film 6, and an n<+> type source region 12 and an n<+> type pixel electrode 13 used also as a drain region are, for example, formed in a self-aligning manner.</p> |
