| 摘要 |
PURPOSE:To detect with high accuracy any defect on a substrate produced upon pattern transfer by inspecting, in comparison, a pattern formed on the substrate with a mask pattern. CONSTITUTION:A reticle 1 is placed on a X-Y stage 3, and a transmitted light emanating from the lower surface of the reticle 1 is adapted to enter a CCD image sensor 9 through an optical system 5 and a prism 7. The sensor 9 converts image information to an electric signal, which is then supplied to an information processing unit 13. A patterned substrate 2 is placed on the surface of a X-Y stage 4 using the reticle 1, and irradiated with a scanned laser 12 beam. A reflected light from the substrate 2 is incident upon a CCD image sensor 10, converted into an electric signal, and fed to a processing part 13. The processing part 13 compares and identifies an image from the reticle with a pattern image on the substrate. Thus, any defect which might be produced upon pattern transfer can be detected highly accurately. |
