| 摘要 |
PURPOSE:To prevent the infiltration of water and moisture into electrode parts and to improve reliability by forming the sensitive gates, electrode pads and leads of FET elements to an opposite surface and molding the pads and leads by using a frame and resins. CONSTITUTION:Islands 2 of silicon are formed by etching the upper silicon layer of a silicon wafer. The electrode pads 3, 3' of the drains and sources of the FET elements are provided on the islands 2 and further, the sensitive gates are provided to the base of the islands 2 to form chips. Chip holding holes 13 and leads 12 are previously provided on the substrate 11 and the chips are installed in the holes 13 to electrically connect the pads 3, 3' and the leads 12. The frame 14 larger than the holes 13 are thereafter placed on the chips and the silicone resin and epoxy resin are packed into the frame. Since the pads and leads are provided on the surface opposite to the sensitive gates, the immersion of the pads and leads in a soln. is obviated and the infiltration of the water and moisture is prevented by the frame and the packed resins. The reliability is thus improved. |
