发明名称 |
ION IMPLANTATION APPARATUS AND METHOD FOR MASKLESS PROCESSING |
摘要 |
Accelerated ions are formed into a beam. The ion beam is scanned over the surface of an object to be treated by use of a deflection appts.. The clock frequency of the deflection appts. is continuously controlled and the amt. of ion implantation is regulated. Thus the ions are selectively implanted onto the surface of the object and a desired ion implantation pattern is formed. This processing is an ion implantion method in which high precision is achieved easily.
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申请公布号 |
KR890003497(B1) |
申请公布日期 |
1989.09.22 |
申请号 |
KR19840008262 |
申请日期 |
1984.12.22 |
申请人 |
FUJISU CO. LTD. |
发明人 |
OKAMURA SIKERU;DAKUTSI DAKAO |
分类号 |
B01J19/08;H01J37/304;H01J37/317;H01L21/265;(IPC1-7):H01L21/265 |
主分类号 |
B01J19/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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