发明名称 AU-AG COMPLEX BRAZING FILLER FOR ASSEMBLING SEMICONDUCTOR DEVICE
摘要 PURPOSE:To secure joinability of Au alloy brazing filler having excellent heat conductivity by forming Au or Au alloy brazing filler layer on one side face or both faces of Ag layer. CONSTITUTION:In au Au-Ag complex brazing filler cladding the Ag layer to the Au or Au alloy brazing filler, the joinability to a semiconductor element can be secured with the Au material and the heat conductivity can be improved with the cladded Ag layer. In the two layer complex brazing filler cladding the Au material on one side face of the Ag layer, when the whole thickness of the brazing filler is the extremely thin brazing filler having the prescribed value or less, warping is developed to the two layer complex brazing filler with difference between coefficients of heat expansion for the Au material and the Ag layer and the workability is worsened. In the three layer complex brazing filler forming the intermediated layer as the Ag layer and the Au layer to the both upper and lower faces, the deformation during heating operation is reatrained and the workability is drastically improved. By this method, the joinability of the Au alloy brazing filler having the excellent heating workability can be secured.
申请公布号 JPH01237094(A) 申请公布日期 1989.09.21
申请号 JP19880064777 申请日期 1988.03.18
申请人 MITSUBISHI METAL CORP 发明人 UCHIYAMA NAOKI;YAMAMOTO SHIGERU
分类号 B23K35/14;B23K35/02;B23K35/30 主分类号 B23K35/14
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